Research

Application of nitride semiconductors to thermoelectric materials

Elucidation of thermoelectric properties of nitride semiconductors and verification of thermoelectric devices using nitride semiconductors have been conducted. We aim to construct an utilization system of waste heat from nitride optical and electronic devices through nitride thermoelectric devices.

Application of SiC/Si substrates

We have proposed the utilization of SiC/Si substrates for heteroepitaxial growth by Si surface carbonization. Elucidation of carbonization mechanism and verification of heteroepitaxial growth have been conducted. 

Combination of diamond and nitride semiconductors

We aim to propose novel devices by combining diamond and nitride semiconductors.