Subject 1
Application of nitride semiconductors to thermoelectric materials
Elucidation of thermoelectric properties of nitride semiconductors and verification of thermoelectric devices using nitride semiconductors have been conducted.
Subject 2
Application of SiC/Si substrates
Elucidation of Si surface carbonization mechanism to fabricate SiC/Si substrates and verification of the substrates for heteroepitaxial growth have been conducted.
Subject 3
Combination of diamond and nitride semiconductors
We aim to propose novel devices by combining diamond and nitride semiconductors.
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